cha2157 rohs compliant ref. : dscha21577150 - 30 may 07 1/6 specifications subject to change without notice united monolithic semiconductors s.a.s. route dpartementale 128 - b.p.46 - 91401 orsay cede x france tel. : +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 33 03 09 55-60ghz low noise / medium power amplifier gaas monolithic microwave ic description the cha2157 is a two stage low noise and medium power amplifier. it is designed for a wide range of applications, from military to commercial communication systems. the backside of the chip is both rf and dc grounded. this helps simplify the assembly process. the circuit is manufactured with a phemt process, 0.15m gate length, via holes through the substrate, air bridges and electron beam gate lithography. it is available in chip form. main features 3.5 db noise figure 10 db 1db gain 15 dbm output power @ -1db gain comp. dc power consumption, 80ma @ 3.3v chip size: 1.71 x 1.04 x 0.10 mm -20 -15 -10 -5 0 5 10 15 55 56 57 58 59 60 frequency (ghz) gain & rloss (db) gain s11 s22 typical on wafer measurements main characteristics tamb. = 25c symbol parameter min typ max unit fop operating frequency range 55 60 ghz g small signal gain 8 10 12 db nf noise figure 3.5 4.5 db p1db output power at 1db gain compression 13 15 db m id bias current 80 150 ma esd protection: electrostatic discharge sensitive d evice. observe handling precautions!
cha2157 55-60ghz low noise amplifier ref. : dscha21577150 - 30 may 07 2/6 specification s subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 electrical characteristics for broadband operation tamb = +25c, vd = 3.3v symbol parameter min typ max unit fop operating frequency range (1) 55 60 ghz g small signal gain (1) 8 10 12 db d g small signal gain flatness (1) 1.0 2.0 db is reverse isolation (1) 20 25 db nf noise figure 3.5 4.5 db p1db cw output power at 1db compression (1) 13 15 dbm vswrin input vswr (1) 3.0:1 6.0:1 vswrout output vswr (1) 3.0:1 6.0:1 vd dc voltage 3.3 3.8 v id bias current 80 150 ma (1) these values are representative for cw on-wafer measurements that are made without bonding wires at the rf ports. a wire bond of typically 0.1 to 0.15nh will improve the input and output matching. absolute maximum ratings tamb. = 25c (1) symbol parameter values unit vd drain bias voltage 4.0 v id drain bias current 150 ma vg gate bias voltage -2.0 to +0.4 v pin maximum peak input power overdrive (2) +15 dbm ta operating temperature range -40 to +85 c tstg storage temperature range -55 to +155 c (1) operation of this device above anyone of these parameters may cause permanent damage. (2) duration < 1s.
55-60ghz low noise amplifier cha2157 ref. : dscha21577150 - 30 may 07 3/6 specification s subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 typical on wafer scattering parameters bias conditions: vd=+3.3v, vg1=vg2 to have id=80ma f(ghz) s11 s11 s12 s12 s21 s21 s22 s22 db deg db deg db deg db deg 15 -6,19 168,5 -53,85 104,2 -4,75 -110,1 -2,94 146, 8 16 -6,01 163,4 -53,05 83,1 -5,02 -126 -3,07 142,5 17 -5,78 158,3 -55,51 61,9 -5,8 -141,7 -3,32 138,2 18 -5,57 152,8 -63,53 136,7 -6,59 -154,4 -3,34 134, 5 19 -5,32 148,7 -49,37 58,7 -6,68 -164,3 -3,7 127,7 20 -5,04 142,7 -51,91 58,7 -7,14 -174 -4,2 123,4 21 -4,8 137,4 -51,32 48,4 -7,51 172,8 -4,71 120,3 22 -4,5 131,6 -52,83 40,4 -8,77 162,3 -5,05 118 23 -4,32 125,4 -50,9 67 -9,37 162,4 -5,33 114 24 -4,06 119,8 -49,33 39,6 -9,09 150,7 -6,14 111,7 25 -3,83 113,1 -49,97 36,3 -10,11 142,7 -6,85 111,1 26 -3,65 106,5 -49,38 37,1 -11,13 139,8 -7,43 113,4 27 -3,56 99,7 -47,44 39,9 -11,39 143,2 -7,66 116,1 28 -3,42 93,1 -45,59 23,7 -10,79 145,5 -7,83 120,6 29 -3,33 85,6 -46,24 25 -9,24 145,2 -7,15 127,2 30 -3,32 78,1 -43,98 12,4 -7,26 139,8 -5,72 129,5 31 -3,35 70,4 -42,56 2 -5,66 125,3 -4,07 126,3 32 -3,47 62,2 -41,07 -12,4 -5,35 110,7 -2,81 117,8 33 -3,69 53,6 -40,29 -28,3 -5,21 98,9 -2,13 107,8 34 -4,05 44,7 -40,08 -46,4 -5,56 91,8 -1,91 97,8 35 -4,58 35 -40,8 -63,2 -5,61 88,6 -1,95 88,9 36 -5,45 24,5 -41,16 -70,6 -4,92 89,3 -2,12 80,9 37 -6,88 13,9 -41,12 -84,2 -3,29 88 -2,3 73,4 38 -9,34 3,7 -42,27 -89,6 -1,05 83,8 -2,51 66,2 39 -13,51 -1,3 -41,21 -108,8 1,77 74,4 -2,7 58,2 40 -21,64 49,9 -41,07 -130,8 4,18 55,5 -3,22 50,2 41 -13,04 95,8 -47,32 -151,5 5,47 38,5 -3,59 43,3 42 -7,18 87,7 -50,87 -74,5 7,16 20,8 -4,06 34,9 43 -4,19 70,7 -42,36 -79,2 8,35 -0,2 -4,88 26,9 44 -2,48 53,6 -38,05 -96,4 9,2 -19,7 -5,68 20 45 -1,56 37,1 -35,54 -113,9 9,96 -39,3 -6,66 12,8 46 -1,13 22 -34,48 -122,1 10,55 -58,1 -7,73 6,5 47 -0,93 6 -32,16 -127,2 11,32 -77 -9,16 0,1 48 -1,23 -8,5 -28,67 -156,4 11,99 -98 -10,87 0,2 49 -2,14 -22 -28,47 176,8 12,18 -121 -11,61 6,6 50 -3,09 -34,3 -29,18 157,7 12,1 -142,7 -11,33 7,5 51 -4,76 -42,4 -29,48 147,1 11,94 -163,6 -10,87 5,3 52 -6,29 -45,5 -27,33 127,2 11,65 176,6 -10,03 2,7 53 -7,54 -46,3 -27,27 99,4 11,31 156,8 -9,34 -6,2 54 -7,99 -42,1 -27,59 81,8 10,87 137,9 -8,91 -16,1 55 -7,63 -39 -27,52 64,5 10,44 119,9 -8,6 -27 56 -6,75 -39,3 -27,7 50,7 10 102,2 -8,49 -37,5 57 -5,78 -43,8 -26,84 38,4 9,64 84,8 -8,27 -48,9 58 -4,75 -51,4 -26,96 22,3 9,39 67,5 -8,12 -59,8 59 -4,31 -63,3 -26,49 4,2 9,1 46,8 -8,13 -69,7 60 -4,01 -71,9 -26,42 -10,1 8,56 30,1 -7,89 -80,5
cha2157 55-60ghz low noise amplifier ref. : dscha21577150 - 30 may 07 4/6 specification s subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 typical on wafer measurements bias conditions: tamb=+25c, vd=3.3v, vg1=vg2 to ha ve id=80ma -20 -15 -10 -5 0 5 10 15 0 10 20 30 40 50 60 frequency (ghz) gain & rloss (db) gain s11 s22 -20 -15 -10 -5 0 5 10 15 55 56 57 58 59 60 frequency (ghz) gain & rloss (db) gain s11 s22 typical packaged measurements bias conditions: tamb=+25c, vd=3.3v, vg1=vg2 to ha ve id=80ma -20 -15 -10 -5 0 5 10 15 50 52 54 56 58 60 frequency (ghz) gain & rloss (db) gain s11 s22 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 50 52 54 56 58 60 frequency (ghz) gain & nf (db) gain nf
55-60ghz low noise amplifier cha2157 ref. : dscha21577150 - 30 may 07 5/6 specification s subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 chip assembly and mechanical data note: supply feed should be capacitively bypassed. 25m diameter gold wire is to be prefered. bonding pad positions. (chip thickness: 100m. all dimensions are in micro meters)
cha2157 55-60ghz low noise amplifier ref. : dscha21577150 - 30 may 07 6/6 specification s subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 ordering information chip form : cha2157-99f/00 information furnished is believed to be accurate an d reliable. however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by impli cation or otherwise under any patent or patent rights of united monolithic semiconductors s.a.s. . specifications mentioned in this publication are subject to change without notice. this publication supersedes and re places all information previously supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical components in life support devi ces or systems without express written approval fro m united monolithic semiconductors s.a.s.
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